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Part Details for IRF1010EPBF by Infineon Technologies AG
Overview of IRF1010EPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IRF1010EPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRF1010EPBF-ND
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DigiKey | MOSFET N-CH 60V 84A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
2881 In Stock |
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$0.5801 / $1.5400 | Buy Now |
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DISTI #
IRF1010EPBF
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Avnet Americas | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1010EPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 325 |
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$0.5404 / $0.6562 | Buy Now |
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DISTI #
63J7165
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Avnet Americas | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7165) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Bulk | 84 Partner Stock |
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$0.8160 / $1.7100 | Buy Now |
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DISTI #
942-IRF1010EPBF
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Mouser Electronics | MOSFET MOSFT 60V 81A 12mOhm 86.6nC RoHS: Compliant | 347 |
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$0.5800 / $1.3800 | Buy Now |
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DISTI #
70016934
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RS | MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 12 Milliohms, ID 84A, TO-220AB, PD 200W, gFS 69S | Infineon IRF1010EPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 13 |
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$1.0900 / $1.4600 | Buy Now |
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Future Electronics | Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 2030Tube |
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$0.5300 / $0.6500 | Buy Now |
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Future Electronics | Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
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$0.5300 / $0.6300 | Buy Now |
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Quest Components | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 800 |
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$1.0428 / $2.5280 | Buy Now |
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Rochester Electronics | IRF1010E - 20V-30V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 1450 |
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$0.5742 / $0.6755 | Buy Now |
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DISTI #
IRF1010EPBF
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Avnet Americas | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1010EPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 325 |
|
$0.5404 / $0.6562 | Buy Now |
Part Details for IRF1010EPBF
IRF1010EPBF CAD Models
IRF1010EPBF Part Data Attributes
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IRF1010EPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF1010EPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 330 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1010EPBF
This table gives cross-reference parts and alternative options found for IRF1010EPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010EPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF1010EPBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRF1010EPBF vs IRF1010EPBF |