Datasheets
IRF120 by:

9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for IRF120 by Rochester Electronics LLC

Overview of IRF120 by Rochester Electronics LLC

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Part Details for IRF120

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IRF120 Part Data Attributes

IRF120 Rochester Electronics LLC
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IRF120 Rochester Electronics LLC 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.2 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF120

This table gives cross-reference parts and alternative options found for IRF120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF120PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF120 vs IRF120PBF
IRF120 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF120 vs IRF120
IRF120 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF120 vs IRF120
Part Number Description Manufacturer Compare
IRF131 Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF120 vs IRF131
IRF132 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF120 vs IRF132
2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF120 vs 2N6756
IRF143 24A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF120 vs IRF143
JANTXV2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF120 vs JANTXV2N6758
JAN2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency IRF120 vs JAN2N6756
MTM20N10 Power Field-Effect Transistor, 20A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF120 vs MTM20N10
IRF141 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF120 vs IRF141
IRF130 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF120 vs IRF130
IRF120PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF120 vs IRF120PBF

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