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Transistors Power Field-Effect Transistors IRF130

IRF130
Description: 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Overview of IRF130 by Rochester Electronics LLC

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Part Data Attributes for IRF130 by Rochester Electronics LLC
Parametric Data

IRF130
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.16 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
COMMERCIAL
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF130
    Rochester Electronics LLC
    14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
    VS

Alternate Parts for IRF130

This table gives cross-reference parts and alternative options found for IRF130. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF130, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF130-JQR-BR1 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF130 vs IRF130-JQR-BR1
IRF131 Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF130 vs IRF131
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF130 vs JANTXV2N6756
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF130 vs JANTXV2N6756
IRF133 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF130 vs IRF133
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF130 vs IRF130
JANTX2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF130 vs JANTX2N6756
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF130 vs JANTXV2N6756
JANHCA2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG IRF130 vs JANHCA2N6756
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF130 vs IRF130
Part Number Description Manufacturer Compare
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF130 vs IRF141
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF130 vs 2N6758
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF130 vs JANTXV2N6756
IRF220 Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF130 vs IRF220
IRF133R 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF130 vs IRF133R
IRF1302L Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRF130 vs IRF1302L
IRF232R 8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF130 vs IRF232R
IRF130SMD-JQR-BR4 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF130 vs IRF130SMD-JQR-BR4
UFN232 Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF130 vs UFN232
IRF130SMD05DSG-JQR-B 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF130 vs IRF130SMD05DSG-JQR-B

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