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Transistors / Power Field-Effect Transistors / IRF1404ZPBF
Datasheets
IRF1404ZPBF by:
Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

Part Details for IRF1404ZPBF by Infineon Technologies AG

Results Overview of IRF1404ZPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF1404ZPBF Information

IRF1404ZPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF1404ZPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7191
Newark N Channel Mosfet, 40V, 190A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:190A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1404ZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $1.7200
  • 10 $1.2700
  • 100 $1.0100
  • 500 $0.9960
  • 1,000 $0.9610
  • 3,000 $0.9540
  • 5,000 $0.9120
$0.9120 / $1.7200 Buy Now
DISTI # IRF1404ZPBF
Avnet Americas Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1404ZPBF) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.5206
  • 2,000 $0.5121
  • 4,000 $0.5036
  • 6,000 $0.4951
  • 8,000 $0.4866
$0.4866 / $0.5206 Buy Now
DISTI # 70016941
RS MOSFET, POWER, N-CH, VDSS 40V, RDS(ON) 2.7 MILLIOHMS, ID 190A, TO-220AB, PD 220W,-55C Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $1.4500
  • 10 $1.3800
  • 20 $1.3100
$1.3100 / $1.4500 RFQ
Rochester Electronics IRF1404 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 52743
  • 100 $0.8658
  • 500 $0.7792
  • 1,000 $0.7186
  • 10,000 $0.6407
  • 100,000 $0.5368
$0.5368 / $0.8658 Buy Now
DISTI # IRF1404ZPBF
TME Transistor: N-MOSFET, unipolar, 40V, 190A, 220W, TO220AB Min Qty: 1 261
  • 1 $1.3900
  • 10 $0.9740
  • 25 $0.9020
  • 50 $0.8520
  • 100 $0.8060
  • 250 $0.7500
  • 500 $0.7100
  • 1,000 $0.6740
  • 2,000 $0.6610
$0.6610 / $1.3900 Buy Now
DISTI # TMOSP11707
Rutronik N-CH 40V 190A 3,7mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 16000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $0.7380
  • 150 $0.6958
  • 250 $0.6536
  • 550 $0.5904
  • 1,000 $0.5693
$0.5693 / $0.7380 Buy Now
DISTI # IRF1404ZPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube 2965
  • 1 $0.5680
  • 10 $0.5300
  • 50 $0.5200
  • 100 $0.4850
  • 200 $0.4770
  • 1,000 $0.4720
$0.4720 / $0.5680 Buy Now
Chip Stock Mosfet,Power, N-ch, Vdss40V, Rds(on)2.7MILLIOHMS, Id190A, TO-220AB, Pd220W, -55DE 33500
RFQ
DISTI # SP001574476
EBV Elektronik Trans MOSFET NCH 40V 190A 3Pin3Tab TO220AB (Alt: SP001574476) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 120A 3.7m10V 200W 4V150uA 1 N-Channel TO-220AB Single FETs MOSFETs RoHS 528
  • 1 $0.7766
  • 10 $0.6189
  • 50 $0.5400
  • 100 $0.4611
  • 500 $0.4131
  • 1,000 $0.3899
$0.3899 / $0.7766 Buy Now
DISTI # IRF1404ZPBF
Maritex MOSFET Devices, INFINEON, IRF1404ZPBF, 40 V, 130 A, 20 V, 200 W Min Qty: 1 Package Multiple: 1 8550
  • 1 $1.4500
  • 10 $0.9360
  • 100 $0.6710
  • 500 $0.6330
  • 1,000 $0.6060
  • 5,000 $0.5760
$0.5760 / $1.4500 Buy Now
Win Source Electronics MOSFET N-CH 40V 75A TO-220AB 20000
  • 95 $0.6215
  • 200 $0.5814
  • 310 $0.5615
  • 445 $0.5214
  • 580 $0.5013
  • 725 $0.4812
$0.4812 / $0.6215 Buy Now

Part Details for IRF1404ZPBF

IRF1404ZPBF CAD Models

  • Part Symbol

    schematic symbol

  • Footprint

    pcb footprint

  • 3D Model

    2d presentation

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IRF1404ZPBF Part Data Attributes

Parametric Data
IRF1404ZPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF1404ZPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code Compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 330 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0037 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 550 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 710 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1404ZPBF

This table gives cross-reference parts and alternative options found for IRF1404ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1404ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRF1404Z Infineon Technologies AG Check for Price Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 IRF1404ZPBF vs AUIRF1404Z
IRF1404ZGPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 IRF1404ZPBF vs IRF1404ZGPBF
IRF1404ZPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IRF1404ZPBF vs IRF1404ZPBF
IRF1404Z International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IRF1404ZPBF vs IRF1404Z
IRF1404PBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF1404ZPBF vs IRF1404PBF
IRF1404 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF1404ZPBF vs IRF1404
IRF1404 International Rectifier Check for Price Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF1404ZPBF vs IRF1404
AUIRF1404ZL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN IRF1404ZPBF vs AUIRF1404ZL
equivalents icon

IRF1404ZPBF Related Parts

IRF1404ZPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF1404ZPBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF1404ZPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF1404ZPBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.

  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.

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