IRF152
Description: Power Field-Effect Transistor, 40A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Overview of IRF152 by TT Electronics Resistors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

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Part Data Attributes for IRF152 by TT Electronics Resistors

IRF152
TT Electronics Resistors
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
40 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Element Material
SILICON
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  1. IRF152
    TT Electronics Resistors
    Power Field-Effect Transistor, 40A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
    VS

Alternate Parts for IRF152

This table gives cross-reference parts and alternative options found for IRF152. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF152, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN Microsemi Corporation IRF152 vs 2N6764
IRF150-JQR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF152 vs IRF150-JQR-BR1
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp IRF152 vs JANTX2N6764
IRF150R1 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF152 vs IRF150R1
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF152 vs JANTXV2N6764
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF152 vs JANTX2N6764
IRF150-JQR-BR1 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF152 vs IRF150-JQR-BR1
2N6764-QR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF152 vs 2N6764-QR-BR1
IRF152 Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF152 vs IRF152
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF152 vs 2N6764
Part Number Description Manufacturer Compare
IRF152 40A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF152 vs IRF152
BUZ24 Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF152 vs BUZ24
MTM25N10 25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF152 vs MTM25N10
IRF034PBF Power Field-Effect Transistor, 25A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF152 vs IRF034PBF
IRF150 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF152 vs IRF150
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Defense Logistics Agency IRF152 vs JANTXV2N6764
IRF151 Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF152 vs IRF151
IRF034 25A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF152 vs IRF034
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF152 vs IRF153
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF152 vs IRF153

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