IRF153
Description: 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Overview of IRF153 by Intersil Corporation

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Part Data Attributes for IRF153 by Intersil Corporation

IRF153
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
33 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
132 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
135 ns
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  1. IRF153
    Intersil Corporation
    33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
    VS

Alternate Parts for IRF153

This table gives cross-reference parts and alternative options found for IRF153. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF153, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN Microsemi Corporation IRF153 vs 2N6764
IRF150-JQR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF153 vs IRF150-JQR-BR1
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp IRF153 vs JANTX2N6764
IRF150R1 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF153 vs IRF150R1
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF153 vs JANTXV2N6764
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF153 vs JANTX2N6764
IRF150-JQR-BR1 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF153 vs IRF150-JQR-BR1
2N6764-QR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF153 vs 2N6764-QR-BR1
IRF152 Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF153 vs IRF152
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF153 vs 2N6764
Part Number Description Manufacturer Compare
IRF152 40A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF153 vs IRF152
BUZ24 Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF153 vs BUZ24
MTM25N10 25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF153 vs MTM25N10
IRF034PBF Power Field-Effect Transistor, 25A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF153 vs IRF034PBF
IRF150 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF153 vs IRF150
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Defense Logistics Agency IRF153 vs JANTXV2N6764
IRF151 Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF153 vs IRF151
IRF034 25A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF153 vs IRF034
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF153 vs IRF153
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF153 vs IRF153

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