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Part Details for IRF200P222 by Infineon Technologies AG
Overview of IRF200P222 by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRF200P222
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93AC7142
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Newark | Mosfet, N-Ch, 200V, 182A, 175Deg C, 556W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:182A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF200P222 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 873 |
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$6.5400 / $10.7900 | Buy Now |
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DISTI #
448-IRF200P222-ND
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DigiKey | MOSFET N-CH 200V 182A TO247AC Min Qty: 1 Lead time: 18 Weeks Container: Tube |
1393 In Stock |
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$4.9084 / $10.1500 | Buy Now |
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DISTI #
IRF200P222
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Avnet Americas | Transistor MOSFET N-CH 200V 182A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRF200P222) RoHS: Compliant Min Qty: 64 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 249 Partner Stock |
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$5.1500 / $5.7300 | Buy Now |
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DISTI #
93AC7142
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Avnet Americas | Transistor MOSFET N-CH 200V 182A 3-Pin TO-247AC Tube - Bulk (Alt: 93AC7142) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk | 96 Partner Stock |
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$7.9900 / $10.7900 | Buy Now |
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DISTI #
IRF200P222
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Avnet Americas | Transistor MOSFET N-CH 200V 182A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRF200P222) RoHS: Compliant Min Qty: 400 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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$4.4175 | Buy Now |
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DISTI #
726-IRF200P222
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Mouser Electronics | MOSFETs IFX OPTIMOS RoHS: Compliant | 1000 |
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$4.9000 / $9.4000 | Buy Now |
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Future Electronics | Single N-Channel 200 V 6.6 mOhm 135 nC StrongIRFET™ Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 18 Weeks Container: Tube | 0Tube |
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$4.6700 / $4.8100 | Buy Now |
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Future Electronics | Single N-Channel 200 V 6.6 mOhm 135 nC StrongIRFET™ Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 18 Weeks Container: Tube | 0Tube |
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$4.6700 / $4.8100 | Buy Now |
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DISTI #
81424908
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Verical | Trans MOSFET N-CH 200V 182A 3-Pin(3+Tab) TO-247 Tube Min Qty: 400 Package Multiple: 400 Date Code: 2302 | Americas - 2800 |
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$6.3220 | Buy Now |
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DISTI #
69695617
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Verical | Trans MOSFET N-CH 200V 182A 3-Pin(3+Tab) TO-247 Tube Min Qty: 4 Package Multiple: 1 Date Code: 2314 | Americas - 408 |
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$6.2125 / $8.4250 | Buy Now |
Part Details for IRF200P222
IRF200P222 CAD Models
IRF200P222 Part Data Attributes
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IRF200P222
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF200P222
Infineon Technologies AG
Power Field-Effect Transistor, 182A I(D), 200V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1070 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 182 A | |
| Drain-source On Resistance-Max | 0.0066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 728 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |