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Part Details for IRF200P223 by Infineon Technologies AG
Overview of IRF200P223 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IRF200P223
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39AH8946
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Newark | Mosfet, N-Ch, 200V, 100A, 175Deg C, 313W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:100A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF200P223 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 855 |
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$3.5800 / $6.9300 | Buy Now |
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DISTI #
448-IRF200P223-ND
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DigiKey | MOSFET N-CH 200V 100A TO247AC Min Qty: 1 Lead time: 18 Weeks Container: Tube |
1674 In Stock |
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$3.0871 / $7.1400 | Buy Now |
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DISTI #
IRF200P223
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Avnet Americas | Transistor MOSFET N-CH 200V 100A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRF200P223) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 400 |
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RFQ | |
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DISTI #
39AH8946
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Avnet Americas | Transistor MOSFET N-CH 200V 100A 3-Pin TO-247AC Tube - Bulk (Alt: 39AH8946) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 428 Partner Stock |
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$4.7000 / $6.9300 | Buy Now |
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DISTI #
726-IRF200P223
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Mouser Electronics | MOSFETs IFX OPTIMOS RoHS: Compliant | 776 |
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$3.0800 / $6.9100 | Buy Now |
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Future Electronics | Single N-Channel 200 V 11.5 mOhm 68 nC StrongIRFET™ Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 18 Weeks Container: Tube | 0Tube |
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$2.9500 / $3.0600 | Buy Now |
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Future Electronics | Single N-Channel 200 V 11.5 mOhm 68 nC StrongIRFET™ Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 18 Weeks Container: Tube | 0Tube |
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$2.9500 / $3.4200 | Buy Now |
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DISTI #
78810550
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Verical | Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 400 Package Multiple: 400 Date Code: 2328 | Americas - 50800 |
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$3.9763 | Buy Now |
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DISTI #
79002673
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Verical | Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 2 Package Multiple: 1 Date Code: 2328 | Americas - 528 |
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$3.0426 / $5.4237 | Buy Now |
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DISTI #
IRF200P223
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TME | Transistor: N-MOSFET, StrongIRFET™, unipolar, 200V, 71A, 313W Min Qty: 1 | 3 |
|
$3.9000 / $5.8800 | Buy Now |
Part Details for IRF200P223
IRF200P223 CAD Models
IRF200P223 Part Data Attributes
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IRF200P223
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF200P223
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 200V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 541 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0115 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |