Datasheets
IRF230EDPBF by:

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF230EDPBF by International Rectifier

Overview of IRF230EDPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF230EDPBF

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IRF230EDPBF Part Data Attributes

IRF230EDPBF International Rectifier
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IRF230EDPBF International Rectifier Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 54 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.49 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 115 ns

Alternate Parts for IRF230EDPBF

This table gives cross-reference parts and alternative options found for IRF230EDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF230EDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF230ED Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF230EDPBF vs IRF230ED
IRF230ED Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF230EDPBF vs IRF230ED
Part Number Description Manufacturer Compare
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF230EDPBF vs 2N6758
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF230EDPBF vs IRF141
UFN222 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF230EDPBF vs UFN222
2N6755 Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF230EDPBF vs 2N6755
IRF133 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF230EDPBF vs IRF133
IRF140 Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF230EDPBF vs IRF140
IRF230-JQR-B 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited IRF230EDPBF vs IRF230-JQR-B
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF230EDPBF vs 2N6758
IRF233R 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF230EDPBF vs IRF233R
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation IRF230EDPBF vs 2N6758

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