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| Manufacturer | Description | Price Range | Set Alert | Details |
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| International Rectifier | Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | $17.6630 / $22.4100 |
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| Infineon Technologies AG | Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | $18.9400 / $19.8900 |
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| New Jersey Semiconductor Products Inc | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 | $10.7200 / $19.1003 |
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| Honest Han | CAN3 |
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| TT Electronics Power and Hybrid / Semelab Limited | 18A, 200V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-204AA, 2 PIN |
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| Intersil Corporation | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
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| Vishay Siliconix | Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Rochester Electronics LLC | Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
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| Harris Semiconductor | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, |
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| STMicroelectronics | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
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| TT Electronics Resistors | Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-204AA, 2 PIN |
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| General Electric Solid State | Transistor |
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| FCI Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| National Semiconductor Corporation | POWER, FET |
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| Texas Instruments | IRF240 |
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| Motorola Semiconductor Products | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, |
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| Motorola Mobility LLC | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
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| Vishay Intertechnologies | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3 |
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| Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-204AE |
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| Samsung Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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