Datasheets
IRF3205VPBF by:

Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF3205VPBF by Infineon Technologies AG

Overview of IRF3205VPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF3205VPBF

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IRF3205VPBF Part Data Attributes

IRF3205VPBF Infineon Technologies AG
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IRF3205VPBF Infineon Technologies AG Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 264 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 390 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3205VPBF

This table gives cross-reference parts and alternative options found for IRF3205VPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205VPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75344P3 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF3205VPBF vs HUF75344P3
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3205VPBF vs IRF3205
HUF75344P3 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205VPBF vs HUF75344P3
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF3205VPBF vs IRF3205PBF
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF3205VPBF vs IRF3205
HUF75344P3 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, 800-TUBE onsemi IRF3205VPBF vs HUF75344P3
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF3205VPBF vs IRF3205VPBF
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205VPBF vs IRF3205PBF
Part Number Description Manufacturer Compare
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3205VPBF vs IRF3205
HUF75339P3 75A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205VPBF vs HUF75339P3
HUF75344P3 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC IRF3205VPBF vs HUF75344P3
HUFA75345P3 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205VPBF vs HUFA75345P3
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF3205VPBF vs IRF3205VPBF
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF3205VPBF vs IRF3205ZPBF
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205VPBF vs IRF3205ZPBF
HUF75343P3 75A, 55V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205VPBF vs HUF75343P3
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF3205VPBF vs IRF3205
HUF75344P3 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, 800-TUBE onsemi IRF3205VPBF vs HUF75344P3

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