Datasheets
IRF331 by:

TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-3

Part Details for IRF331 by Intersil Corporation

Overview of IRF331 by Intersil Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF331

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IRF331 Part Data Attributes:

IRF331 Intersil Corporation
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IRF331 Intersil Corporation TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-3
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 5.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF331

This table gives cross-reference parts and alternative options found for IRF331. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF331, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF331 vs 2N6760
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Rochester Electronics LLC IRF331 vs 2N6760
2N6760TXV 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF331 vs 2N6760TXV
2N6760TX Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation IRF331 vs 2N6760TX
IRF332 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA Intersil Corporation IRF331 vs IRF332
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix IRF331 vs 2N6760
UFN330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF331 vs UFN330
IRF331 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF331 vs IRF331
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF331 vs 2N6760
2N6760TXV Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation IRF331 vs 2N6760TXV
Part Number Description Manufacturer Compare
RFM4N40 Power Field-Effect Transistor, 4A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF331 vs RFM4N40
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF331 vs 2N6760
BUP62R1 6.8A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF331 vs BUP62R1
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency IRF331 vs JANTX2N6760
BUP61R1 5.56A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF331 vs BUP61R1
IRF330PBF Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF331 vs IRF330PBF
BUP61 Power Field-Effect Transistor, 5.56A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF331 vs BUP61
JANTX2N6760 5.5A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation IRF331 vs JANTX2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF331 vs 2N6760R1
IRF322 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF331 vs IRF322

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