| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | $1.3300 / $1.5600 |
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| National Semiconductor Corporation | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8.3A I(D),TO-204AA |
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| Rochester Electronics LLC | 8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| Samsung Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| FCI Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| General Electric Solid State | Transistor |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8.3A I(D),TO-204AA |
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| New Jersey Semiconductor Products Inc | Trans MOSFET N-CH 350V 8.3A 3-Pin(2+Tab) TO-3 |
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| Intersil Corporation | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8.3A I(D),TO-204AA |
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| Harris Semiconductor | Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, |
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