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Transistors Power Field-Effect Transistors IRF350

IRF350
Description: Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Overview of IRF350 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF350 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package RoHS: Not Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 Container: Bag 0
Bag
  • 1 $24.4800
$24.4800 Buy Now

CAD Models for IRF350 by Infineon Technologies AG
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Part Data Attributes for IRF350 by Infineon Technologies AG
Parametric Data

IRF350
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TO-3, 2 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
11.3 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF350
    Infineon Technologies AG
    Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
    VS

Alternate Parts for IRF350

This table gives cross-reference parts and alternative options found for IRF350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N6768 14A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF350 vs JANTX2N6768
IRF353 13A, 350V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, METAL PACKAGE-2 Motorola Mobility LLC IRF350 vs IRF353
2N6768PBF Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier IRF350 vs 2N6768PBF
IRF353 Power Field-Effect Transistor, 13A I(D), 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corporation IRF350 vs IRF353
IRF350 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,14A I(D),TO-204AA Freescale Semiconductor IRF350 vs IRF350
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp IRF350 vs JANTXV2N6768
IRF350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF350 vs IRF350
IRF353 Power Field-Effect Transistor, 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corp (RETIRED) IRF350 vs IRF353
JAN2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF350 vs JAN2N6768
IRF351 Power Field-Effect Transistor, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corp (RETIRED) IRF350 vs IRF351
Part Number Description Manufacturer Compare
IRF352 Power Field-Effect Transistor, 13A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF350 vs IRF352
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF350 vs 2N6768
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF350 vs JANTXV2N6768
IRF351 Power Field-Effect Transistor, 15A I(D), 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corporation IRF350 vs IRF351
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency IRF350 vs JANTX2N6768
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF350 vs JANTX2N6768
2N6768PBF Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier IRF350 vs 2N6768PBF
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF350 vs 2N6768
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF350 vs 2N6768
IRF351 Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-204AA, 2 PIN Fairchild Semiconductor Corporation IRF350 vs IRF351

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