Part Details for IRF3710ZSTRLPBF by Infineon Technologies AG
Results Overview of IRF3710ZSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (3 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF3710ZSTRLPBF Information
IRF3710ZSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF3710ZSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
32AC7469
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Newark | Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:59A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF3710ZSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 12 |
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$0.2830 | Buy Now |
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DISTI #
86AK5354
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Newark | Mosfet, N-Ch, 100V, 59A, To-263 Rohs Compliant: Yes |Infineon IRF3710ZSTRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.0500 / $1.1100 | Buy Now |
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DISTI #
32AC7469
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Avnet Americas | Power MOSFET, HEXFET?, N Channel, 100 V, 59 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 32AC7469) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 12 Partner Stock |
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$1.4000 / $2.8000 | Buy Now |
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DISTI #
IRF3710ZSTRLPBF
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Avnet Americas | Power MOSFET, HEXFET?, N Channel, 100 V, 59 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRF3710ZSTRLPBF) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.5519 / $0.5904 | Buy Now |
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DISTI #
70017666
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RS | MOSFET, POWER, N-CH, VDSS 100V, RDS(ON) 14 MILLIOHMS, ID 59A, D2PAK, PD 160W, VGS+/-20V Min Qty: 800 Package Multiple: 1 Container: Bulk | 0 |
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$1.4400 | RFQ |
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Bristol Electronics | 628 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 1650 |
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$0.6089 / $0.9821 | Buy Now |
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DISTI #
TMOSP11778
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Rutronik | N-CH 100V 59A 18mOhm TO263 RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel |
Stock DE - 1600 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.6758 / $0.8761 | Buy Now |
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DISTI #
IRF3710ZSTRLPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 800 |
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$0.6970 / $2.5100 | Buy Now |
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DISTI #
SP001570170
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EBV Elektronik | Power MOSFET HEXFET N Channel 100 V 59 A 0014 ohm TO263 D2PAK Surface Mount (Alt: SP001570170) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF3710ZSTRLPBF
IRF3710ZSTRLPBF CAD Models
IRF3710ZSTRLPBF Part Data Attributes
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IRF3710ZSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3710ZSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF3710ZSTRLPBF
This table gives cross-reference parts and alternative options found for IRF3710ZSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710ZSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF3710ZSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF3710ZSTRLPBF vs IRF3710ZSTRR |
| AUIRF3710ZSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | IRF3710ZSTRLPBF vs AUIRF3710ZSTRR |
| IRF3710ZSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF3710ZSTRLPBF vs IRF3710ZSPBF |
IRF3710ZSTRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF3710ZSTRLPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF3710ZSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF3710ZSTRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
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The maximum allowable power dissipation for the IRF3710ZSTRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.