Part Details for IRF433 by Rochester Electronics LLC
Overview of IRF433 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF433
IRF433 CAD Models
IRF433 Part Data Attributes:
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IRF433
Rochester Electronics LLC
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Datasheet
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IRF433
Rochester Electronics LLC
4A, 450V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 450 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF433
This table gives cross-reference parts and alternative options found for IRF433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UFN433 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF433 vs UFN433 |
| 2N6761R1 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | IRF433 vs 2N6761R1 |
| IRF433 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF433 vs IRF433 |
| 2N6761 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF433 vs 2N6761 |
| 2N6761 | 4A, 450V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF433 vs 2N6761 |
| 2N6761 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF433 vs 2N6761 |