Datasheets
IRF451 by:

13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for IRF451 by Rochester Electronics LLC

Overview of IRF451 by Rochester Electronics LLC

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Part Details for IRF451

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IRF451 Part Data Attributes

IRF451 Rochester Electronics LLC
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IRF451 Rochester Electronics LLC 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF451

This table gives cross-reference parts and alternative options found for IRF451. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF451, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6770E3 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation IRF451 vs 2N6770E3
JAN2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF451 vs JAN2N6770
IRF450 Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF451 vs IRF450
2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG IRF451 vs 2N6770
JANTXV2N6770 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation IRF451 vs JANTXV2N6770
IRF451 Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF451 vs IRF451
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF451 vs IRF451
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF451 vs IRF451
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF451 vs JANTX2N6770
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF451 vs JANTX2N6770
Part Number Description Manufacturer Compare
HUF75617D3ST 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRF451 vs HUF75617D3ST
FQPF4N80 2.2A, 800V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC IRF451 vs FQPF4N80
SPB02N60S5 1.8A, 600V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC IRF451 vs SPB02N60S5
SSH10N90A Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRF451 vs SSH10N90A
HUF75617D3S 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRF451 vs HUF75617D3S
IPP09N03LA 50A, 25V, 0.0155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC IRF451 vs IPP09N03LA
IRF449 Power Field-Effect Transistor, 8.6A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF451 vs IRF449
IRFIP440 Power Field-Effect Transistor, 6.4A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 International Rectifier IRF451 vs IRFIP440
SSP6N90A Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF451 vs SSP6N90A
SPU08P06P Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Siemens IRF451 vs SPU08P06P

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