Part Details for IRF5210-012 by Infineon Technologies AG
Overview of IRF5210-012 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Part Details for IRF5210-012
IRF5210-012 CAD Models
IRF5210-012 Part Data Attributes
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IRF5210-012
Infineon Technologies AG
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Datasheet
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IRF5210-012
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5210-012
This table gives cross-reference parts and alternative options found for IRF5210-012. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210-012, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5210-012 | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF5210-012 vs IRF5210-012 |
| IRF5210-012PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF5210-012 vs IRF5210-012PBF |
| IRF5210-012PBF | 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IRF5210-012 vs IRF5210-012PBF |