Datasheets
IRF5210-015PBF by:

Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF5210-015PBF by International Rectifier

Overview of IRF5210-015PBF by International Rectifier

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for IRF5210-015PBF

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IRF5210-015PBF Part Data Attributes

IRF5210-015PBF International Rectifier
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IRF5210-015PBF International Rectifier Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5210-015PBF

This table gives cross-reference parts and alternative options found for IRF5210-015PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210-015PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5210-015 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF5210-015PBF vs IRF5210-015
IRF5210-015 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRF5210-015PBF vs IRF5210-015
IRF5210-015PBF 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IRF5210-015PBF vs IRF5210-015PBF
Part Number Description Manufacturer Compare
AUIRF5210STRR Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 International Rectifier IRF5210-015PBF vs AUIRF5210STRR
IRF5210-012 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRF5210-015PBF vs IRF5210-012
IRF5210-004 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRF5210-015PBF vs IRF5210-004
IRF5210-013PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF5210-015PBF vs IRF5210-013PBF
IRF5210-006PBF 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IRF5210-015PBF vs IRF5210-006PBF
IRF5210-017PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF5210-015PBF vs IRF5210-017PBF
IRF5210-004PBF 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IRF5210-015PBF vs IRF5210-004PBF
IRF5210-012PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF5210-015PBF vs IRF5210-012PBF
IRF5210-015 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRF5210-015PBF vs IRF5210-015
IRF5210-002PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF5210-015PBF vs IRF5210-002PBF

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