-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
40M7918
|
Newark | P Channel Mosfet, -100V, 40A D2-Pak, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF5210STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 25767 |
|
$1.8600 / $3.3400 | Buy Now |
DISTI #
IRF5210STRLPBFCT-ND
|
DigiKey | MOSFET P-CH 100V 38A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6929 In Stock |
|
$1.3672 / $2.9300 | Buy Now |
DISTI #
IRF5210STRLPBF
|
Avnet Americas | Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 4800 |
|
$1.2751 / $1.5484 | Buy Now |
DISTI #
IRF5210STRLPBF
|
Avnet Americas | Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
40M7918
|
Avnet Americas | Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 40M7918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 2208 Partner Stock |
|
$2.3300 / $3.1700 | Buy Now |
DISTI #
942-IRF5210STRLPBF
|
Mouser Electronics | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS: Compliant | 4320 |
|
$1.3600 / $2.8600 | Buy Now |
DISTI #
70017442
|
RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 60 Milliohms, ID -38A, D2Pak, PD 170W,-55degc | Infineon IRF5210STRLPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 300 |
|
$0.8800 | Buy Now |
|
Future Electronics | Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 60000Reel |
|
$1.3600 / $1.4100 | Buy Now |
|
Future Electronics | Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
|
$1.3600 / $1.4100 | Buy Now |
|
Bristol Electronics | Min Qty: 3 | 484 |
|
$0.8400 / $2.4000 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRF5210STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF5210STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF5210STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF5210S | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IRF5210STRLPBF vs IRF5210S |
IRF5210SPBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRF5210STRLPBF vs IRF5210SPBF |
IRF5210STRR | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IRF5210STRLPBF vs IRF5210STRR |
IRF5210SPBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRF5210STRLPBF vs IRF5210SPBF |
AUIRF5210STRL | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IRF5210STRLPBF vs AUIRF5210STRL |
IRF5210STRLPBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRF5210STRLPBF vs IRF5210STRLPBF |
IRF5210STRL | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IRF5210STRLPBF vs IRF5210STRL |
IRF5210S | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRF5210STRLPBF vs IRF5210S |
AUIRF5210STRL | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | International Rectifier | IRF5210STRLPBF vs AUIRF5210STRL |
IRF5210STRRPBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRF5210STRLPBF vs IRF5210STRRPBF |