There are no models available for this part yet.
Overview of IRF523 by Harris Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRF523 by Harris Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
2156-IRF523-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 833 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2608 In Stock |
|
$0.3600 | Buy Now | |
| Bristol Electronics | Min Qty: 5 | 105 |
|
$0.4219 / $1.1250 | Buy Now | ||
| Quest Components | Part Number Only | 84 |
|
$0.4500 / $1.5000 | Buy Now | ||
| Rochester Electronics | 8A, 80V, 0.36 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2608 |
|
$0.3094 / $0.3640 | Buy Now |
CAD Models for IRF523 by Harris Semiconductor
Part Data Attributes for IRF523 by Harris Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
HARRIS SEMICONDUCTOR
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
80 V
|
|
Drain Current-Max (ID)
|
8 A
|
|
Drain-source On Resistance-Max
|
0.36 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
60 W
|
|
Power Dissipation-Max (Abs)
|
60 W
|
|
Pulsed Drain Current-Max (IDM)
|
32 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
59 ns
|
|
Turn-on Time-Max (ton)
|
58 ns
|
Alternate Parts for IRF523
This table gives cross-reference parts and alternative options found for IRF523. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF523, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP10N10E | 10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IRF523 vs MTP10N10E |
| IRF522-006 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF523 vs IRF522-006 |
| IRF523 | 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF523 vs IRF523 |
| IRF523-001 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF523 vs IRF523-001 |
| IRF523 | Power Field-Effect Transistor, 7A I(D), 60V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF523 vs IRF523 |
| IRF521 | 8A, 60V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF523 vs IRF521 |
| MTP8N10 | Power Field-Effect Transistor, 8A I(D), 100V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF523 vs MTP8N10 |
| IRF522-010 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF523 vs IRF522-010 |
| IRF522-001 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF523 vs IRF522-001 |
| MTP8N08 | Power Field-Effect Transistor, 8A I(D), 80V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF523 vs MTP8N08 |