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Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH8492
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Newark | Planar >= 100V Rohs Compliant: Yes |Infineon IRF530NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 19203 |
|
$0.4150 / $1.0300 | Buy Now |
DISTI #
63J7312
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Newark | N Channel Mosfet, 100V, 17A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:17A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF530NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 21127 |
|
$0.3620 / $0.4280 | Buy Now |
DISTI #
IRF530NPBF-ND
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DigiKey | MOSFET N-CH 100V 17A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
45714 In Stock |
|
$0.3407 / $0.9100 | Buy Now |
DISTI #
IRF530NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF530NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 19203 |
|
$0.3164 / $0.3842 | Buy Now |
DISTI #
63J7312
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Avnet Americas | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7312) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Bulk | 9080 Partner Stock |
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$0.4750 / $1.0100 | Buy Now |
DISTI #
942-IRF530NPBF
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Mouser Electronics | MOSFET MOSFT 100V 17A 90mOhm 24.7nC RoHS: Compliant | 326 |
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$0.3390 / $0.9000 | Buy Now |
DISTI #
70016965
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 90 Milliohms, ID 17A, TO-220AB, PD 70W, gFS 12S | Infineon IRF530NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 2 |
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$0.6500 / $0.9200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 48700Tube |
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$0.3100 / $0.3700 | Buy Now |
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Future Electronics | Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 39Tube |
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$0.3100 / $0.3800 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 108 |
|
$0.8750 / $1.7500 | Buy Now |
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IRF530NPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF530NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 93 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF530NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF530N | 22A, 100V, 0.064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF530NPBF vs IRF530N |
IRF530N | Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF530NPBF vs IRF530N |
IRF530NPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF530NPBF vs IRF530NPBF |
IRF530N,127 | IRF530N | NXP Semiconductors | IRF530NPBF vs IRF530N,127 |
IRF530N | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF530NPBF vs IRF530N |
934055534127 | TRANSISTOR 17 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF530NPBF vs 934055534127 |