Transistors
IRF540
Description: Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IRF540 by Samsung Semiconductor

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Price & Stock for IRF540 by Samsung Semiconductor

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 553
  • 1 $2.3332
  • 118 $1.1666
  • 258 $1.0791
$1.0791 / $2.3332 Buy Now

CAD Models for IRF540 by Samsung Semiconductor
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Part Data Attributes for IRF540 by Samsung Semiconductor

IRF540
Samsung Semiconductor
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
230 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
28 A
Drain-source On Resistance-Max
0.077 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
110 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
135 ns
Turn-on Time-Max (ton)
133 ns
Want to compare parts?
  1. IRF540
    Samsung Semiconductor
    Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for IRF540

This table gives cross-reference parts and alternative options found for IRF540. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF542 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF540 vs IRF542
RFP22N10 Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF540 vs RFP22N10
RFP22N10 22A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF540 vs RFP22N10
IRF542 Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF540 vs IRF542
IRF540-009 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF540 vs IRF540-009
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF540 vs IRF540PBF
IRF540-001 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540 vs IRF540-001
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF540 vs IRF540
IRF542 Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF540 vs IRF542
IRF540 27A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF540 vs IRF540
Part Number Description Manufacturer Compare
IRF542 Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF540 vs IRF542
MTP27N10E 27A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF540 vs MTP27N10E
IRF543 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF540 vs IRF543
IRF540,127 IRF540 NXP Semiconductors IRF540 vs IRF540,127
MTB33N10E 33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 Motorola Mobility LLC IRF540 vs MTB33N10E
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF540 vs IRF540PBF
MTP20N08 Power Field-Effect Transistor, 20A I(D), 80V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF540 vs MTP20N08
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments IRF540 vs IRF540
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF540 vs IRF540
NTB52N10T4 TRANSISTOR 52 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3, FET General Purpose Power onsemi IRF540 vs NTB52N10T4

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