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Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6376
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Newark | Mosfet, N-Ch, 100V, 28A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF540PBF-BE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 627 |
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$1.1400 / $1.5000 | Buy Now |
DISTI #
78AH6376
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Avnet Americas | MOSFET N-CHANNEL 100V - Bulk (Alt: 78AH6376) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk | 627 Partner Stock |
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$1.2100 / $1.8600 | Buy Now |
DISTI #
IRF540PBF-BE3
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Avnet Americas | MOSFET N-CHANNEL 100V - Rail/Tube (Alt: IRF540PBF-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$1.1031 | Buy Now |
DISTI #
78-IRF540PBF-BE3
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Mouser Electronics | MOSFETs TO220 100V 28A N-CH MOSFET RoHS: Compliant | 8378 |
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$1.0700 / $2.0200 | Buy Now |
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Future Electronics | 100V,28A,77MOHM,TO-220 - COO: TAIWAN RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 150Tube |
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$0.8550 / $1.0200 | Buy Now |
DISTI #
IRF540PBF-BE3
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TTI | MOSFETs TO220 100V 28A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 16350 In Stock |
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$0.8900 / $1.0100 | Buy Now |
DISTI #
C1S803606345313
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Chip1Stop | MOSFET RoHS: Compliant | 1000 |
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$0.9713 | Buy Now |
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LCSC | 100V 28A 150W 77m11A10V 4V250uA 1 N-Channel TO-220-3 MOSFETs ROHS | 15 |
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$0.9549 / $1.4920 | Buy Now |
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IRF540PBF-BE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF540PBF-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 1 Day | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 120 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |