| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF540PBF-ND
|
DigiKey | MOSFET N-CH 100V 28A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
29200 In Stock |
|
$0.8666 / $2.3000 | Buy Now | |
|
DISTI #
70459368
|
RS | N-Chan 100V 28 Amp | Siliconix / Vishay IRF540PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.8100 / $2.1300 | RFQ | |
| ComSIT USA | Electronic Component RoHS: Compliant |
|
|
RFQ | |||
| New Advantage Corporation | Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 22700 |
|
$0.8333 / $0.8929 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
|
Part Package Code
|
TO-220AB
|
|
Package Description
|
ROHS COMPLIANT, TO-220, 3 PIN
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Vishay
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
230 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
28 A
|
|
Drain-source On Resistance-Max
|
0.077 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
110 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF540-009 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF540PBF vs IRF540-009 |
| IRF542 | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF540PBF vs IRF542 |
| IRF540PBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF540PBF vs IRF540PBF |
| BUK555-100A | 25A, 100V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | NXP Semiconductors | IRF540PBF vs BUK555-100A |
| IRF540-001 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF540PBF vs IRF540-001 |
| RFP22N10 | Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | IRF540PBF vs RFP22N10 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF540PBF vs IRF540 |
| IRF542 | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF540PBF vs IRF542 |
| IRF540 | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF540PBF vs IRF540 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF540PBF vs IRF540 |
