Part Details for IRF540SPBF by International Rectifier
Overview of IRF540SPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF540SPBF
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | Min Qty: 3 | 275 |
|
$0.9000 / $2.4000 | Buy Now |
|
Quest Components | 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 220 |
|
$1.1200 / $3.2000 | Buy Now |
Part Details for IRF540SPBF
IRF540SPBF CAD Models
IRF540SPBF Part Data Attributes
|
IRF540SPBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRF540SPBF
International Rectifier
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 150 W | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF540SPBF
This table gives cross-reference parts and alternative options found for IRF540SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF540STRL | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF540SPBF vs IRF540STRL |
IRF540STRRPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF540SPBF vs IRF540STRRPBF |
IRF540SPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | Vishay Intertechnologies | IRF540SPBF vs IRF540SPBF |
IRF540S | 23A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | NXP Semiconductors | IRF540SPBF vs IRF540S |
IRF540SPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF540SPBF vs IRF540SPBF |
SIHF540S-GE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF540SPBF vs SIHF540S-GE3 |
SIHF540STRL-GE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF540SPBF vs SIHF540STRL-GE3 |
IRF540STRR | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF540SPBF vs IRF540STRR |
IRF540S | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF540SPBF vs IRF540S |
IRF540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | Vishay Intertechnologies | IRF540SPBF vs IRF540STRLPBF |