Datasheets
IRF540ZPBF by:

Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF540ZPBF by International Rectifier

Overview of IRF540ZPBF by International Rectifier

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Price & Stock for IRF540ZPBF

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 3
  • 1 $0.9450
$0.9450 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 300
  • 1 $1.5750
  • 64 $0.7875
  • 255 $0.6300
$0.6300 / $1.5750 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 40
RFQ
Sense Electronic Company Limited TO-220 957
RFQ

Part Details for IRF540ZPBF

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IRF540ZPBF Part Data Attributes

IRF540ZPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF540ZPBF International Rectifier Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.0265 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 91 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540ZPBF

This table gives cross-reference parts and alternative options found for IRF540ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540ZPBF Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF540ZPBF vs IRF540ZPBF
IRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF540ZPBF vs IRF540Z
AUIRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier IRF540ZPBF vs AUIRF540Z
AUIRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF540ZPBF vs AUIRF540Z
Part Number Description Manufacturer Compare
AUIRF540ZS Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRF540ZPBF vs AUIRF540ZS
IRF540ZL Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRF540ZPBF vs IRF540ZL
IRF540ZSPBF Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540ZPBF vs IRF540ZSPBF
IRF540ZPBF Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF540ZPBF vs IRF540ZPBF
IRF540ZL Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IRF540ZPBF vs IRF540ZL
IRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF540ZPBF vs IRF540Z
IRF540ZSTRRPBF Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF540ZPBF vs IRF540ZSTRRPBF
IRF540ZS Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF540ZPBF vs IRF540ZS
AUIRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier IRF540ZPBF vs AUIRF540Z
AUIRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF540ZPBF vs AUIRF540Z

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