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Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540ZPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
37J1436
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Newark | N Channel Mosfet, 100V, 36A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:36A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF540ZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 9056 |
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$0.4330 / $0.6030 | Buy Now |
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DISTI #
37J1436
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Avnet Americas | Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 37J1436) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 4350 Partner Stock |
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$0.4330 / $0.7700 | Buy Now |
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DISTI #
IRF540ZPBF
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Avnet Americas | Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF540ZPBF) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$0.3614 / $0.4134 | Buy Now |
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DISTI #
70016922
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RS | MOSFET, POWER, N-CH, VDSS 100V, RDS(ON) 21 MILLIOHMS, ID 36A, TO-220AB, PD 92W, GFS 36V Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$1.4900 / $1.7600 | RFQ |
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DISTI #
IRF540ZPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 36A, 92W, TO220AB Min Qty: 1 | 129 |
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$0.5120 / $0.8200 | Buy Now |
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DISTI #
IRF540ZPBF
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IBS Electronics | MOSFET POWER N-CH VDSS 100V RDS(ON) 21MILLIOHMS ID 36A TO-220AB PD 92W GFS 36V Min Qty: 50 Package Multiple: 1 | 5250 |
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$0.8120 / $0.9030 | Buy Now |
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DISTI #
TMOSP11816
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Rutronik | N-CH 100V 36A 26,5mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 1650 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4104 / $0.5320 | Buy Now |
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DISTI #
IRF540ZPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Tube | 349 |
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$0.3990 / $0.4050 | Buy Now |
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Chip Stock | MOSFET,Power, N-Ch, VDSS100V, RDS(ON)21Milliohms, ID36A, TO-220AB, PD92W, gFS36V | 6910 |
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RFQ | |
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DISTI #
SP001561896
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EBV Elektronik | Trans MOSFET NCH 100V 36A 3Pin3Tab TO220AB (Alt: SP001561896) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IRF540ZPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF540ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated, High Reliability, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 120 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.0265 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 91 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for IRF540ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF540Z | International Rectifier | Check for Price | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | IRF540ZPBF vs AUIRF540Z |
The maximum operating temperature range for the IRF540ZPBF is -55°C to 175°C.
To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of less than 10°C/W.
The maximum voltage rating for the IRF540ZPBF is 100V.
Yes, the IRF540ZPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize switching losses.
Handle the device with ESD-protective equipment, and ensure the device is stored in an ESD-protective package or bag when not in use.