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Power Field-Effect Transistor, 60A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AC9751
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Newark | Mosfet, N-Ch, 60V, 60A, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0073Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.7V, Power Rohs Compliant: Yes |Infineon IRF60B217 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1 |
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$0.8200 / $1.7700 | Buy Now |
DISTI #
2156-IRF60B217-448-ND
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DigiKey | MOSFET N-CH 60V 60A TO220AB Min Qty: 388 Lead time: 12 Weeks Container: Bulk MARKETPLACE PRODUCT |
645 In Stock |
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$0.7700 | Buy Now |
DISTI #
IRF60B217-ND
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DigiKey | MOSFET N-CH 60V 60A TO220AB Min Qty: 388 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
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$0.6705 | Buy Now |
DISTI #
IRF60B217
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Avnet Americas | Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF60B217) RoHS: Compliant Min Qty: 467 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 2000 Partner Stock |
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$0.5960 / $0.7823 | Buy Now |
DISTI #
IRF60B217
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Avnet Americas | Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF60B217) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
DISTI #
942-IRF60B217
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Mouser Electronics | MOSFETs 60V, 60A, 9.0 mOhm 44 nC Qg RoHS: Compliant | 582 |
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$0.6700 / $1.8200 | Buy Now |
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Future Electronics | Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
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$0.6550 / $0.7800 | Buy Now |
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Future Electronics | Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
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$0.6550 / $0.7800 | Buy Now |
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Rochester Electronics | Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 2645 |
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$0.6650 / $0.7823 | Buy Now |
DISTI #
C1S322001047520
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Chip1Stop | MOSFET RoHS: Compliant | 4335 |
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$0.7390 | Buy Now |
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IRF60B217
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF60B217
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 124 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 225 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |