There are no models available for this part yet.
Overview of IRF611 by Intersil Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF611 by Intersil Corporation
Part Data Attributes for IRF611 by Intersil Corporation
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INTERSIL CORP
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
150 V
|
|
Drain Current-Max (ID)
|
3.3 A
|
|
Drain-source On Resistance-Max
|
1.5 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
43 W
|
|
Power Dissipation-Max (Abs)
|
43 W
|
|
Pulsed Drain Current-Max (IDM)
|
8 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
34 ns
|
|
Turn-on Time-Max (ton)
|
38 ns
|
Alternate Parts for IRF611
This table gives cross-reference parts and alternative options found for IRF611. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF611, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF610-006 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF611 vs IRF610-006 |
| IRF612 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF611 vs IRF612 |
| IRF611 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF611 vs IRF611 |
| IRF612 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF611 vs IRF612 |
| IRF611-010 | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF611 vs IRF611-010 |
| IRF613 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB | Texas Instruments | IRF611 vs IRF613 |
| IRF611 | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF611 vs IRF611 |
| IRF611 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB | National Semiconductor Corporation | IRF611 vs IRF611 |
| IRF612 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Advanced Microelectronic Products Inc | IRF611 vs IRF612 |
| IRF611-006 | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF611 vs IRF611-006 |