Part Details for IRF6215STRLPBF by Infineon Technologies AG
Overview of IRF6215STRLPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6215STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86AK5359
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Newark | Mosfet, P-Ch, 150V, 13A, To-263 Rohs Compliant: Yes |Infineon IRF6215STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.8600 | Buy Now |
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DISTI #
13AC9180
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Newark | Mosfet, P-Ch, -150V, -13A, To-263, Transistor Polarity:P Channel, Continuous Drain Current Id:-13A, Drain Source Voltage Vds:-150V, On Resistance Rds(On):0.29Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Rohs Compliant: Yes |Infineon IRF6215STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Future Electronics | Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.6600 / $0.7150 | Buy Now |
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DISTI #
IRF6215STRLPBF
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TME | Transistor: P-MOSFET, unipolar, -150V, -13A, 110W, D2PAK Min Qty: 1 | 0 |
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$0.7900 / $1.6000 | RFQ |
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DISTI #
C1S322000831490
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 22 |
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$0.9060 / $1.3100 | Buy Now |
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LCSC | 150V 13A 290m10V6.6A 4V250uA 1 Piece P-Channel D2PAK MOSFETs ROHS | 12 |
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$0.9156 / $0.9643 | Buy Now |
Part Details for IRF6215STRLPBF
IRF6215STRLPBF CAD Models
IRF6215STRLPBF Part Data Attributes
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IRF6215STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6215STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6215STRLPBF
This table gives cross-reference parts and alternative options found for IRF6215STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6215STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRF6215STRR | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IRF6215STRLPBF vs AUIRF6215STRR |
| AUIRF6215S | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | International Rectifier | IRF6215STRLPBF vs AUIRF6215S |
| AUIRF6215STRL | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IRF6215STRLPBF vs AUIRF6215STRL |
| IRF6215STRRPBF | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF6215STRLPBF vs IRF6215STRRPBF |
| IRF6215STRLPBF | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF6215STRLPBF vs IRF6215STRLPBF |
| IRF6215SPBF | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF6215STRLPBF vs IRF6215SPBF |
| IRF6215S | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF6215STRLPBF vs IRF6215S |