Part Details for IRF6218PBF by Infineon Technologies AG
Results Overview of IRF6218PBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF6218PBF Information
IRF6218PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF6218PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31K2167
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Newark | P Channel Mosfet, -150V, 27A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:27A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Infineon IRF6218PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
70017494
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RS | MOSFET, POWER, P-CH, VDSS -150V, RDS(ON) 120 MILLIOHMS, ID -27A, TO-220AB, PD 250W Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$8.0600 / $9.4900 | RFQ |
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Chip Stock | MOSFET,Power, P-Ch, VDSS-150V, RDS(ON)120Milliohms, ID-27A, TO-220AB, PD250W | 6501 |
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RFQ | |
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LCSC | 150V 27A 250W 150m10V16A 5V250uA ITO-220AB-3 Single FETs MOSFETs RoHS | 1 |
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$1.8843 / $3.0892 | Buy Now |
Part Details for IRF6218PBF
IRF6218PBF CAD Models
IRF6218PBF Part Data Attributes
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IRF6218PBF
Infineon Technologies AG
Buy Now
Datasheet
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IRF6218PBF
Infineon Technologies AG
Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6218PBF
This table gives cross-reference parts and alternative options found for IRF6218PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6218PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF6218 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | IRF6218PBF vs IRF6218 |
IRF6218PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF6218PBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF6218PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF6218PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package.