There are no models available for this part yet.
Overview of IRF624 by Harris Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRF624 by Harris Semiconductor
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Rochester Electronics | 3.8A, 250V, 1.1ohm, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 34 |
|
$0.4254 / $0.5005 | Buy Now |
CAD Models for IRF624 by Harris Semiconductor
Part Data Attributes for IRF624 by Harris Semiconductor
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
HARRIS SEMICONDUCTOR
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
120 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
250 V
|
Drain Current-Max (ID)
|
3.8 A
|
Drain-source On Resistance-Max
|
1.1 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
40 W
|
Power Dissipation-Max (Abs)
|
50 W
|
Pulsed Drain Current-Max (IDM)
|
15 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
52 ns
|
Turn-on Time-Max (ton)
|
53 ns
|
Alternate Parts for IRF624
This table gives cross-reference parts and alternative options found for IRF624. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF624, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF624 | 3.8A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF624 vs IRF624 |
IRF624 | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF624 vs IRF624 |
IRF624PBF | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF624 vs IRF624PBF |
IRF624 | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies | IRF624 vs IRF624 |
IRF624PBF | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF624 vs IRF624PBF |
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