Distributor | Stock | MOQ | Package | QTY Break / Prices |
---|---|---|---|---|
View this part on Bristol Electronics | 20 | 1 |
|
Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
20
IRF640
IRF640
Yes
Obsolete
TO-220AB
FLANGE MOUNT, R-PSFM-T3
3
not_compliant
EAR99
8541.29.00.95
STMicroelectronics
8.7
280 mJ
SINGLE WITH BUILT-IN DIODE
200 V
18 A
18 A
0.18 Ω
METAL-OXIDE SEMICONDUCTOR
150 pF
TO-220AB
R-PSFM-T3
e3
1
3
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIHF640 Transistors | TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix | IRF640 vs SIHF640 |
IRF640 Transistors | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF640 vs IRF640 |
SIHF640-E3 Transistors | TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix | IRF640 vs SIHF640-E3 |
IRF640,127 Transistors | IRF640 | NXP Semiconductors | IRF640 vs IRF640,127 |