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Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
E02:0323_00010813
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2330 | Europe - 28045 |
|
$0.3830 / $0.7237 | Buy Now |
DISTI #
V36:1790_13890577
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2331 | Americas - 1243 |
|
$0.4391 / $1.0180 | Buy Now |
DISTI #
V99:2348_13890577
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2213 | Americas - 269 |
|
$0.4391 / $1.0180 | Buy Now |
DISTI #
IRF640NPBF-ND
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DigiKey | MOSFET N-CH 200V 18A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
61846 In Stock |
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$0.4414 / $1.1700 | Buy Now |
DISTI #
69736866
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Verical | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 15 Package Multiple: 1 Date Code: 2330 | Americas - 28035 |
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$0.3538 / $0.6334 | Buy Now |
DISTI #
62525232
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Verical | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 35 Package Multiple: 1 Date Code: 2215 | Americas - 14089 |
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$0.4363 / $0.9088 | Buy Now |
DISTI #
71260327
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Verical | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 17 Package Multiple: 1 Date Code: 2331 | Americas - 1243 |
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$1.0180 | Buy Now |
DISTI #
62132652
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Verical | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 18 Package Multiple: 1 Date Code: 2213 | Americas - 269 |
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$1.0180 | Buy Now |
DISTI #
IRF640NPBF
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF640NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 37652 |
|
$0.4112 / $0.4993 | Buy Now |
DISTI #
63J7351
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Newark | Mosfet, N Channel, 200V, 18A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF640NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 72016 |
|
$0.4330 / $0.6440 | Buy Now |
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IRF640NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF640NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 247 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |