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Overview of IRF6633APBF by Infineon Technologies AG
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- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF6633APBF by Infineon Technologies AG
Part Data Attributes for IRF6633APBF by Infineon Technologies AG
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|
---|---|
Rohs Code
|
Yes
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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Package Description
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CHIP CARRIER, R-XBCC-N3
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Avalanche Energy Rating (Eas)
|
65 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
20 V
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Drain Current-Max (ID)
|
16 A
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Drain-source On Resistance-Max
|
0.0056 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-XBCC-N3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
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CHIP CARRIER
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Peak Reflow Temperature (Cel)
|
260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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42 W
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Pulsed Drain Current-Max (IDM)
|
130 A
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Qualification Status
|
Not Qualified
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Surface Mount
|
YES
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Terminal Form
|
NO LEAD
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Terminal Position
|
BOTTOM
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Time@Peak Reflow Temperature-Max (s)
|
40
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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