IRF6644TRPBF
Description: Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

Overview of IRF6644TRPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Automotive

Price & Stock for IRF6644TRPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 91Y4742
Newark Mosfet, N-Ch, 100V, 60A, 150Deg C, 89W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.8V Rohs Compliant: Yes |Infineon IRF6644TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 10415
  • 1 $2.6000
  • 10 $2.1500
  • 25 $2.0100
  • 50 $1.8600
  • 100 $1.7200
  • 250 $1.5800
  • 500 $1.4600
$1.4600 / $2.6000 Buy Now
DISTI # 86AK5363
Newark Mosfet, N-Ch, 100V, 60A, Directfet Mn Rohs Compliant: Yes |Infineon IRF6644TRPBF RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,800 $1.3100
  • 9,600 $1.2500
  • 19,200 $1.1200
  • 28,800 $1.0700
  • 48,000 $1.0400
$1.0400 / $1.3100 Buy Now
DISTI # IRF6644TRPBFCT-ND
DigiKey MOSFET N-CH 100V 10.3A DIRECTFET Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 17172
In Stock
  • 1 $3.2000
  • 10 $2.0840
  • 100 $1.4488
  • 500 $1.1767
  • 1,000 $1.0891
  • 2,000 $1.0477
  • 4,800 $1.0477
$1.0477 / $3.2000 Buy Now
DISTI # IRF6644TRPBF
Avnet Americas Transistor MOSFET N-CH 100V 60A 7-Pin DirectFET MN T/R - Tape and Reel (Alt: IRF6644TRPBF) RoHS: Compliant Min Qty: 299 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 503415 Partner Stock
  • 299 $1.1986
  • 310 $1.1819
  • 600 $1.1735
  • 1,500 $1.1400
  • 3,000 $1.1148
  • 15,000 $1.0813
  • 30,000 $1.0645
$1.0645 / $1.1986 Buy Now
DISTI # 91Y4742
Avnet Americas Transistor MOSFET N-CH 100V 60A 7-Pin DirectFET MN T/R - Product that comes on tape, but is not reeled (Alt: 91Y4742) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack 10415 Partner Stock
  • 1 $2.8700
  • 10 $2.2800
  • 25 $2.1600
  • 50 $2.0400
  • 100 $1.9200
$1.9200 / $2.8700 Buy Now
DISTI # IRF6644TRPBF
Avnet Americas Trans MOSFET N-CH 100V 10.3A 7-Pin Direct-FET MN T/R 4.8k Pb free EL - Tape and Reel (Alt: IRF6644TRPBF) RoHS: Not Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-IRF6644TRPBF
Mouser Electronics MOSFETs 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vg RoHS: Compliant 4181
  • 1 $2.7200
  • 10 $2.0000
  • 100 $1.4700
  • 500 $1.1900
  • 1,000 $1.0500
  • 4,800 $1.0400
$1.0400 / $2.7200 Buy Now
Future Electronics Single N-Channel 100 V 13 mOhm 47 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks Container: Reel 24000
Reel
  • 4,800 $1.0200
$1.0200 Buy Now
Future Electronics Single N-Channel 100 V 13 mOhm 47 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks Container: Reel 0
Reel
  • 4,800 $1.0200
$1.0200 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 10.3A I(D), 100V, 0.013OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2803
  • 1 $3.3252
  • 391 $1.3716
  • 730 $1.2470
$1.2470 / $3.3252 Buy Now
Rochester Electronics IRF6644 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 1624
  • 1 $1.2200
  • 25 $1.2000
  • 100 $1.1500
  • 500 $1.1000
  • 1,000 $1.0400
$1.0400 / $1.2200 Buy Now
DISTI # IRF6644TRPBF
TME Transistor: N-MOSFET, unipolar, 100V, 10.3A, 89W, DirectFET Min Qty: 1 0
  • 1 $2.5100
  • 5 $2.1500
  • 25 $1.9800
$1.9800 / $2.5100 RFQ
DISTI # SMC-IRF6644TRPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 9964
RFQ
DISTI # C1S322000482179
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 28800
  • 4,800 $1.0800
  • 9,600 $1.0700
  • 14,400 $1.0300
$1.0300 / $1.0800 Buy Now
DISTI # C1S322000482188
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 9580
  • 1 $1.6300
  • 10 $1.4700
  • 50 $1.2300
  • 100 $1.1600
  • 2,000 $1.0400
$1.0400 / $1.6300 Buy Now
DISTI # C1S322000482160
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 270
  • 1 $1.8520
  • 10 $1.5720
  • 25 $1.5630
  • 100 $1.4060
  • 250 $1.2490
$1.2490 / $1.8520 Buy Now
DISTI # SP001563476
EBV Elektronik Transistor MOSFET N-CH 100V 60A 7-Pin DirectFET MN T/R (Alt: SP001563476) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 13 Weeks, 0 Days EBV - 24000
Buy Now
LCSC 100V 13m10.3A10V 4.8V150uA 1 N-Channel DirectFET MOSFETs ROHS 12
  • 1 $1.4025
  • 10 $1.3679
  • 30 $1.3444
  • 100 $1.3208
$1.3208 / $1.4025 Buy Now
New Advantage Corporation Single N-Channel 100 V 13 mOhm 47 nC HEXFET� Power Mosfet - DirectFET� RoHS: Compliant Min Qty: 1 Package Multiple: 4800 19200
  • 4,800 $1.4100
  • 19,200 $1.3200
$1.3200 / $1.4100 Buy Now
Win Source Electronics MOSFET N-CH 100V 10.3A DIRECTFET 133054
  • 55 $0.9900
  • 125 $0.8120
  • 195 $0.7870
  • 265 $0.7610
  • 340 $0.7360
  • 455 $0.6600
$0.6600 / $0.9900 Buy Now

CAD Models for IRF6644TRPBF by Infineon Technologies AG
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Part Data Attributes for IRF6644TRPBF by Infineon Technologies AG

IRF6644TRPBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
LOW CONDUCTION LOSS
Avalanche Energy Rating (Eas)
86 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
10 A
Drain-source On Resistance-Max
0.013 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XBCC-N3
JESD-609 Code
e1
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
2.8 W
Power Dissipation-Max (Abs)
89 W
Pulsed Drain Current-Max (IDM)
228 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
NO LEAD
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF6644TRPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
    VS

Alternate Parts for IRF6644TRPBF

This table gives cross-reference parts and alternative options found for IRF6644TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6644TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF6644TRPBF Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644TRPBF
IRF6644PBF Power Field-Effect Transistor, Infineon Technologies AG IRF6644TRPBF vs IRF6644PBF
IRF6644TR1 Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644TR1
IRF6644PBF Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644PBF
IRF6644 Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644
Part Number Description Manufacturer Compare
IRF6644PBF Power Field-Effect Transistor, Infineon Technologies AG IRF6644TRPBF vs IRF6644PBF
IRF6644 Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644
IRF6644TR1 Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644TR1
IRF6644PBF Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6644TRPBF vs IRF6644PBF

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