Part Details for IRF6712STRPBF by Infineon Technologies AG
Overview of IRF6712STRPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Motor control systems
Price & Stock for IRF6712STRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9184
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Newark | Mosfet, N-Ch, 25V, 68A, Directfet Sq, Transistor Polarity:N Channel, Continuous Drain Current Id:68A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.0038Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.9V, Power Rohs Compliant: Yes |Infineon IRF6712STRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Rochester Electronics | IRF6712 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 14218 |
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$0.6210 / $0.7306 | Buy Now |
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DISTI #
IRF6712STRPBF
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TME | Transistor: N-MOSFET, unipolar, 25V, 17A, 36W, DirectFET Min Qty: 4800 | 0 |
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$0.6120 | RFQ |
Part Details for IRF6712STRPBF
IRF6712STRPBF CAD Models
IRF6712STRPBF Part Data Attributes
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IRF6712STRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6712STRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N2 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36 W | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6712STRPBF
This table gives cross-reference parts and alternative options found for IRF6712STRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6712STRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6712STR1PBF | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6712STRPBF vs IRF6712STR1PBF |
| IRF6712SPBF | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 | Infineon Technologies AG | IRF6712STRPBF vs IRF6712SPBF |
| IRF6712STRPBF | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 | International Rectifier | IRF6712STRPBF vs IRF6712STRPBF |
| IRF6712SPBF | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 | International Rectifier | IRF6712STRPBF vs IRF6712SPBF |