Datasheets
IRF7101TR by:

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for IRF7101TR by International Rectifier

Overview of IRF7101TR by International Rectifier

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Price & Stock for IRF7101TR

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 8 2745
  • 8 $0.6750
  • 31 $0.4388
  • 115 $0.2531
  • 397 $0.2160
  • 858 $0.1890
  • 2,039 $0.1755
$0.1755 / $0.6750 Buy Now
Quest Components 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 2196
  • 1 $0.9000
  • 134 $0.2700
  • 742 $0.2340
$0.2340 / $0.9000 Buy Now
Quest Components 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 1646
  • 1 $0.7500
  • 121 $0.3500
  • 572 $0.3125
$0.3125 / $0.7500 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Stock EU - 29083
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics   46000
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for IRF7101TR

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IRF7101TR Part Data Attributes

IRF7101TR International Rectifier
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IRF7101TR International Rectifier Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7101TR

This table gives cross-reference parts and alternative options found for IRF7101TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7101TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7101TRPBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier IRF7101TR vs IRF7101TRPBF
IRF7101 Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7101TR vs IRF7101
IRF7101PBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier IRF7101TR vs IRF7101PBF
Part Number Description Manufacturer Compare
BSO303SPHXUMA1 Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG IRF7101TR vs BSO303SPHXUMA1
PHN210T TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power NXP Semiconductors IRF7101TR vs PHN210T
FY3ABJ-03 3A, 30V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation IRF7101TR vs FY3ABJ-03
F5H3N Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd IRF7101TR vs F5H3N
BSO303SPH Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG IRF7101TR vs BSO303SPH
PHN210 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7101TR vs PHN210
F4H3ND Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd IRF7101TR vs F4H3ND
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG IRF7101TR vs BSO305N
FDS9953AD84Z Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation IRF7101TR vs FDS9953AD84Z
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 Fairchild Semiconductor Corporation IRF7101TR vs HUF76113DK8T

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