Part Details for IRF7101TRPBF by Infineon Technologies AG
Overview of IRF7101TRPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7101TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70017683
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RS | MOSFET, Power, Dual N-Ch, VDSS 20V, RDS(ON) 0.1Ohm, ID 3.5A, SO-8,PD 2W, VGS +/-12V | Infineon IRF7101TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.6000 / $0.7100 | RFQ |
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DISTI #
IRF7101TRPBF
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TME | Transistor: N-MOSFET x2, unipolar, 20V, 3.5A, 2W, SO8 Min Qty: 4000 | 0 |
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$0.2790 | RFQ |
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Win Source Electronics | MOSFET 2N-CH 20V 3.5A 8-SOIC | 46000 |
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$0.5660 / $0.8480 | Buy Now |
Part Details for IRF7101TRPBF
IRF7101TRPBF CAD Models
IRF7101TRPBF Part Data Attributes
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IRF7101TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7101TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1995-07-01 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7101TRPBF
This table gives cross-reference parts and alternative options found for IRF7101TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7101TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7101TRPBF | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | International Rectifier | IRF7101TRPBF vs IRF7101TRPBF |
| IRF7101 | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7101TRPBF vs IRF7101 |
| IRF7101PBF | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | International Rectifier | IRF7101TRPBF vs IRF7101PBF |