Part Details for IRF723 by Intersil Corporation
Overview of IRF723 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF723
IRF723 CAD Models
IRF723 Part Data Attributes
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IRF723
Intersil Corporation
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Datasheet
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IRF723
Intersil Corporation
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 2.8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF723
This table gives cross-reference parts and alternative options found for IRF723. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF723, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF723 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF723 vs IRF723 |
| MTP2N40 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Semiconductor Technology Inc | IRF723 vs MTP2N40 |
| BUZ76 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF723 vs BUZ76 |
| IRF722 | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRF723 vs IRF722 |
| IRF722 | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF723 vs IRF722 |
| BUZ60B | 4.5A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRF723 vs BUZ60B |
| IRF722 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF723 vs IRF722 |
| RFP4N40 | Power Field-Effect Transistor, 4A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF723 vs RFP4N40 |
| IRF723-009 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF723 vs IRF723-009 |
| BUZ76 | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IRF723 vs BUZ76 |