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Transistors / Power Field-Effect Transistors / IRF730
Datasheets
IRF730 by:

5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for IRF730 by STMicroelectronics

Overview of IRF730 by STMicroelectronics

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Price & Stock for IRF730

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 93
  • 3 $1.6875
  • 13 $1.0969
  • 47 $0.6328
$0.6328 / $1.6875 Buy Now
Bristol Electronics   96
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 4
  • 1 $0.8400
$0.8400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 166
  • 1 $1.2600
  • 21 $0.6300
  • 96 $0.3780
$0.3780 / $1.2600 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 74
  • 1 $2.2500
  • 12 $1.1250
  • 54 $0.6750
$0.6750 / $2.2500 Buy Now
Chip 1 Exchange INSTOCK 700
RFQ

Part Details for IRF730

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IRF730 Part Data Attributes

Parametric Data
IRF730 STMicroelectronics
Buy Now Datasheet
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IRF730 STMicroelectronics 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 193 ns
Turn-on Time-Max (ton) 107 ns

Alternate Parts for IRF730

This table gives cross-reference parts and alternative options found for IRF730. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF730, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 Microsemi Corporation IRF730 vs IRF730
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF730 vs IRF730
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF730 vs IRF730
IRF730PBF Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF730 vs IRF730PBF
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF730 vs IRF730
BUK455-400B TRANSISTOR 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRF730 vs BUK455-400B
IRF730 7.2A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN NXP Semiconductors IRF730 vs IRF730
BUZ60 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRF730 vs BUZ60
IRF730 TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp IRF730 vs IRF730
BUZ205 Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens IRF730 vs BUZ205
Part Number Description Manufacturer Compare
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF730 vs IRF730
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF730 vs IRF730
BUZ60 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Rochester Electronics LLC IRF730 vs BUZ60
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF730 vs IRF730
IRF730PBF Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF730 vs IRF730PBF
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF730 vs IRF730
BUZ60 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRF730 vs BUZ60
BUZ60 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF730 vs BUZ60
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF730 vs IRF730
BUK455-400B TRANSISTOR 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRF730 vs BUK455-400B

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