Datasheets
IRF7303PBF by:

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7303PBF by Infineon Technologies AG

Overview of IRF7303PBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF7303PBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8233
Newark Dual N Channel Mosfet, 30V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:4.9A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Infineon IRF7303PBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IRF7303PBF-ND
DigiKey MOSFET 2N-CH 30V 4.9A 8SO Lead time: 98 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # IRF7303PBF
Avnet Americas Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC Pb free - Rail/Tube (Alt: IRF7303PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 5 Partner Stock
RFQ
Rochester Electronics IRF7303 - HEXFET Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 5
  • 1 $0.2188
  • 25 $0.2144
  • 100 $0.2057
  • 500 $0.1969
  • 1,000 $0.1860
$0.1860 / $0.2188 Buy Now
Flip Electronics Stock, ship today 2176
RFQ
Win Source Electronics MOSFET 2N-CH 30V 4.9A 8-SOIC 55900
  • 90 $0.5660
  • 220 $0.4640
  • 335 $0.4500
  • 460 $0.4350
  • 595 $0.4210
  • 800 $0.3770
$0.3770 / $0.5660 Buy Now

Part Details for IRF7303PBF

IRF7303PBF CAD Models

IRF7303PBF Part Data Attributes

IRF7303PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7303PBF Infineon Technologies AG Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7303PBF

This table gives cross-reference parts and alternative options found for IRF7303PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7303PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7303TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7303PBF vs IRF7303TRPBF
IRF7303Q Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7303PBF vs IRF7303Q
IRF7303QPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7303PBF vs IRF7303QPBF
IRF7303TR Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 International Rectifier IRF7303PBF vs IRF7303TR
AUIRF7303QTR Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7303PBF vs AUIRF7303QTR
AUIRF7303QTR Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7303PBF vs AUIRF7303QTR
Part Number Description Manufacturer Compare
IRF7303TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7303PBF vs IRF7303TRPBF

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