Datasheets
IRF7303TRPBF by:

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7303TRPBF by Infineon Technologies AG

Overview of IRF7303TRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF7303TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 39M3567
Newark Dual N Channel Mosfet, 30V, 4.9A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:4.9A, Continuous Drain Current Id P Channel:4.9A Rohs Compliant: Yes |Infineon IRF7303TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 3399
  • 1 $0.8940
  • 10 $0.7300
  • 25 $0.6760
  • 50 $0.6210
  • 100 $0.5670
  • 250 $0.5240
  • 500 $0.4800
  • 1,000 $0.3920
$0.3920 / $0.8940 Buy Now
DISTI # IRF7303PBFCT-ND
DigiKey MOSFET 2N-CH 30V 4.9A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.8600
  • 10 $0.7020
  • 100 $0.5459
  • 500 $0.4628
  • 1,000 $0.3770
  • 2,000 $0.3549
  • 4,000 $0.3549
  • 8,000 $0.3380
  • 12,000 $0.3224
  • 28,000 $0.3217
$0.3217 / $0.8600 Buy Now
DISTI # 70017689
RS MOSFET, Power, Dual N-Ch, VDSS 30V, RDS(ON) 0.05Ohm, ID 4.9A, SO-8,PD 2W, VGS +/-20V | Infineon IRF7303TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk 0
  • 20 $1.0400
  • 100 $0.9900
  • 200 $0.9400
  • 2,000 $0.8900
  • 5,000 $0.8300
$0.8300 / $1.0400 RFQ
Future Electronics Dual N-Channel 30V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel 4000
Reel
  • 4,000 $0.1570
  • 8,000 $0.1540
  • 12,000 $0.1500
$0.1500 / $0.1570 Buy Now
Future Electronics Dual N-Channel 30V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel 0
Reel
  • 4,000 $0.2950
  • 8,000 $0.2850
  • 12,000 $0.2850
  • 16,000 $0.2800
$0.2800 / $0.2950 Buy Now
Quest Components 4 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 1212
  • 1 $2.0600
  • 631 $0.8498
  • 1,178 $0.7725
$0.7725 / $2.0600 Buy Now
Rochester Electronics IRF7303 - HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 26
  • 1 $0.3754
  • 25 $0.3679
  • 100 $0.3529
  • 500 $0.3379
  • 1,000 $0.3191
$0.3191 / $0.3754 Buy Now
DISTI # IRF7303TRPBF
TME Transistor: N-MOSFET x2, unipolar, 30V, 4.9A, 2W, SO8 Min Qty: 4000 0
  • 4,000 $0.2380
$0.2380 RFQ
Ameya Holding Limited   Min Qty: 4000 3620
  • 4,000 $0.4343
  • 20,000 $0.4297
$0.4297 / $0.4343 Buy Now
DISTI # TMOSP11862
Rutronik 2N-CH 30V 4,9A 50mOhm SO8 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel Stock DE - 4000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 4,000 $0.3167
  • 8,000 $0.2986
  • 12,000 $0.2805
  • 16,000 $0.2534
  • 24,000 $0.2443
$0.2443 / $0.3167 Buy Now
DISTI # 24S3280
Bürklin Elektronik Infineon Technologies N channel dual HEXFET power MOSFET, 30 V, 4.9 A, SO-8, IRF7303TRPBF Min Qty: 10 3930
  • 10 $0.7597
  • 50 $0.6729
  • 250 $0.5752
$0.5752 / $0.7597 Buy Now
DISTI # SP001577432
EBV Elektronik Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC T/R Pb free (Alt: SP001577432) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 4.9A 2W 50m10V2.4A 1V250uA 2 N-Channel SOIC-8 MOSFETs ROHS 1215
  • 1 $0.5506
  • 10 $0.4552
  • 30 $0.4085
  • 100 $0.3618
  • 500 $0.2963
  • 1,000 $0.2823
$0.2823 / $0.5506 Buy Now

Part Details for IRF7303TRPBF

IRF7303TRPBF CAD Models

IRF7303TRPBF Part Data Attributes:

IRF7303TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7303TRPBF Infineon Technologies AG Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7303TRPBF

This table gives cross-reference parts and alternative options found for IRF7303TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7303TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRF7303Q Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7303TRPBF vs AUIRF7303Q

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