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Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8236
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Newark | Dual P Channel Mosfet, -20V, 4.7A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:4.3A, Continuous Drain Current Id P Channel:4.3A Rohs Compliant: Yes |Infineon IRF7304TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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NexGen Digital | 2 |
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RFQ | ||
DISTI #
2468003
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element14 Asia-Pacific | MOSFET, DUAL P CH, -20V, -4.3A, SOIC-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.4264 / $0.9100 | Buy Now |
DISTI #
2468003RL
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element14 Asia-Pacific | MOSFET, DUAL P CH, -20V, -4.3A, SOIC-8 RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.4264 / $0.6157 | Buy Now |
DISTI #
2468003RL
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Farnell | MOSFET, DUAL P CH, -20V, -4.3A, SOIC-8 RoHS: Compliant Min Qty: 100 Lead time: 40 Weeks, 1 Days Container: Reel | 0 |
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$0.6207 / $0.8567 | Buy Now |
DISTI #
2468003
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Farnell | MOSFET, DUAL P CH, -20V, -4.3A, SOIC-8 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.6207 / $1.2201 | Buy Now |
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Win Source Electronics | MOSFET 2P-CH 20V 4.3A 8-SOIC / Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R | 241 |
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$0.3770 / $0.5660 | Buy Now |
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IRF7304TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7304TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7304TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7304TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7304PBF | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7304TRPBF vs IRF7304PBF |
IRF7304PBF | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7304TRPBF vs IRF7304PBF |
IRF7304 | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7304TRPBF vs IRF7304 |
IRF7304TR | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7304TRPBF vs IRF7304TR |
IRF7304 | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7304TRPBF vs IRF7304 |
IRF7304TRPBF | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7304TRPBF vs IRF7304TRPBF |
IRF7304TR | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF7304TRPBF vs IRF7304TR |