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Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7304TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8236
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Newark | Dual P Channel Mosfet, -20V, 4.7A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:4.3A, Continuous Drain Current Id P Channel:4.3A Rohs Compliant: Yes |Infineon IRF7304TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
70017435
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RS | IRF7304TRPBF DUAL P-CHANNEL MOSFET TRANSISTOR, 4.3 A, 20 V, 8-PIN SOIC Min Qty: 4000 Package Multiple: 1 Container: Bulk | 0 |
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$0.8900 | RFQ |
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IRF7304TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRF7304TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Additional Feature | Logic Level Compatible | |
| Configuration | Separate, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | P-Channel | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for IRF7304TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7304TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7304TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304TRPBF vs IRF7304TR |
The maximum operating temperature range for the IRF7304TRPBF is -55°C to 175°C.
Yes, the IRF7304TRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
The maximum current rating for the IRF7304TRPBF is 120A.
Yes, the IRF7304TRPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.
The typical turn-on time for the IRF7304TRPBF is 10ns, and the typical turn-off time is 20ns.