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Transistors / Power Field-Effect Transistors / IRF7306
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IRF7306 by:
International Rectifier

Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRF7306 by International Rectifier

Results Overview of IRF7306 by International Rectifier

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IRF7306 Information

IRF7306 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7306

Part # Distributor Description Stock Price Buy
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 278
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics HEXFET Power MOSFET 16936
  • 140 $0.4227
  • 295 $0.3954
  • 455 $0.3818
  • 655 $0.3545
  • 850 $0.3409
  • 1,060 $0.3273
$0.3273 / $0.4227 Buy Now

Part Details for IRF7306

IRF7306 CAD Models

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IRF7306 Part Data Attributes

Parametric Data
IRF7306 International Rectifier
Buy Now Datasheet
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IRF7306 International Rectifier Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code Compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for IRF7306

This table gives cross-reference parts and alternative options found for IRF7306. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7306, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7306TRPBF Infineon Technologies AG $0.4911 Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7306 vs IRF7306TRPBF
IRF7306TR International Rectifier Check for Price Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET IRF7306 vs IRF7306TR
IRF7306 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IRF7306 vs IRF7306
IRF7306TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IRF7306 vs IRF7306TR
IRF7306PBF International Rectifier Check for Price Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7306 vs IRF7306PBF
Part Number Manufacturer Composite Price Description Compare
FDS6975 onsemi $1.0065 Dual P-Channel Logic Level PowerTrench® MOSFET -30V, -6A, 32mΩ, SOIC-8, 2500-REEL IRF7306 vs FDS6975
HAT1026R Renesas Electronics Corporation Check for Price 7A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 IRF7306 vs HAT1026R
MMDF3N02HDR2G onsemi Check for Price Power MOSFET 20V 3A 90 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL IRF7306 vs MMDF3N02HDR2G
IRF7403TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, IRF7306 vs IRF7403TR
NDS9956AS62Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 IRF7306 vs NDS9956AS62Z
RF1K49223 Intersil Corporation Check for Price 2.5A, 30V, 0.36ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA IRF7306 vs RF1K49223
IRF7313 International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7306 vs IRF7313
BSO220N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3.2A I(D), 20V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF7306 vs BSO220N
IRF7314 International Rectifier Check for Price Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7306 vs IRF7314
PHN210-TAPE-7 NXP Semiconductors Check for Price TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power IRF7306 vs PHN210-TAPE-7
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