IRF7306TR
Description: Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of IRF7306TR by Infineon Technologies AG

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  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IRF7306TR by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRF7306TR
Avnet Americas HEXFET POWER MOSFET - Tape and Reel (Alt: IRF7306TR) RoHS: Not Compliant Min Qty: 916 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 15218 Partner Stock
  • 916 $0.3904
  • 920 $0.3849
  • 1,900 $0.3822
  • 4,600 $0.3713
  • 9,200 $0.3631
  • 46,000 $0.3522
  • 92,000 $0.3467
$0.3467 / $0.3904 Buy Now
Win Source Electronics MOSFET 2P-CH 30V 3.6A 8-SOIC 20020
  • 95 $0.5420
  • 225 $0.4450
  • 350 $0.4310
  • 480 $0.4170
  • 625 $0.4030
  • 830 $0.3620
$0.3620 / $0.5420 Buy Now

CAD Models for IRF7306TR by Infineon Technologies AG
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Part Data Attributes for IRF7306TR by Infineon Technologies AG

IRF7306TR
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
2
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF7306TR
    Infineon Technologies AG
    Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

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