Datasheets
IRF731-004 by:

Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for IRF731-004 by International Rectifier

Overview of IRF731-004 by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRF731-004

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IRF731-004 Part Data Attributes:

IRF731-004 International Rectifier
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IRF731-004 International Rectifier Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRF731-004

This table gives cross-reference parts and alternative options found for IRF731-004. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF731-004, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF731-004PBF Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF731-004 vs IRF731-004PBF
IRF731-004PBF 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET Infineon Technologies AG IRF731-004 vs IRF731-004PBF
Part Number Description Manufacturer Compare
IRF731-004PBF Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF731-004 vs IRF731-004PBF
IRF731-004PBF 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET Infineon Technologies AG IRF731-004 vs IRF731-004PBF

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