-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRF7313TRPBF by Infineon Technologies AG
Overview of IRF7313TRPBF by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7313TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
42Y0405
|
Newark | Mosfet, N-Ch, 30V, 6.5A, 150Deg C, 2W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:6.5A, Continuous Drain Current Id P Channel:6.5A Rohs Compliant: Yes |Infineon IRF7313TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
DISTI #
IRF7313PBFCT-ND
|
DigiKey | MOSFET 2N-CH 30V 6.5A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) |
5617 In Stock |
|
$0.2904 / $1.3000 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Container: Reel | 60000Reel |
|
$0.2850 / $0.3050 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.2850 / $0.3000 | Buy Now |
|
|
Ameya Holding Limited | Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8 | 1853 |
|
RFQ | |
|
DISTI #
C1S322000483521
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 3772 |
|
$0.3580 / $0.8410 | Buy Now |
|
DISTI #
C1S322000483512
|
Chip1Stop | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes | 1665 |
|
$0.2930 / $0.7529 | Buy Now |
|
DISTI #
SP001562160
|
EBV Elektronik | Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC T/R (Alt: SP001562160) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 11 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
LCSC | 30V 6.5A 29m10V5.8A 2W 1V250uA 2 N-Channel SOIC-8 MOSFETs ROHS | 10712 |
|
$0.2529 / $0.4838 | Buy Now |
|
|
New Advantage Corporation | Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET� Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 4000 | 52000 |
|
$0.3467 / $0.3714 | Buy Now |
Part Details for IRF7313TRPBF
IRF7313TRPBF CAD Models
IRF7313TRPBF Part Data Attributes
|
|
IRF7313TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF7313TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 82 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7313TRPBF
This table gives cross-reference parts and alternative options found for IRF7313TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7313TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7313 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7313TRPBF vs IRF7313 |
| IRF7313TRPBF | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7313TRPBF vs IRF7313TRPBF |
| IRF7313 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7313TRPBF vs IRF7313 |
| IRF7313PBF | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7313TRPBF vs IRF7313PBF |