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Transistors Power Field-Effect Transistors IRF7313TRPBF

IRF7313TRPBF
Description: Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

Overview of IRF7313TRPBF by International Rectifier

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Price & Stock for IRF7313TRPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   124
RFQ
Quest Components 6.5 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 99
  • 1 $1.0800
  • 24 $0.6480
  • 94 $0.5400
$0.5400 / $1.0800 Buy Now
ComSIT USA Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant Stock EU - 140
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Velocity Electronics Our Stock 98
RFQ

CAD Models for IRF7313TRPBF by International Rectifier
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Part Data Attributes for IRF7313TRPBF by International Rectifier
Parametric Data

IRF7313TRPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas)
82 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
6.5 A
Drain-source On Resistance-Max
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
2 W
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7313TRPBF
    International Rectifier
    Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
    VS

Alternate Parts for IRF7313TRPBF

This table gives cross-reference parts and alternative options found for IRF7313TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7313TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7313 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7313TRPBF vs IRF7313
IRF7313TRPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7313TRPBF vs IRF7313TRPBF
IRF7313 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7313TRPBF vs IRF7313
IRF7313PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7313TRPBF vs IRF7313PBF
Part Number Description Manufacturer Compare
FDS4935A Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7313TRPBF vs FDS4935A
MMDF3N02HD Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products IRF7313TRPBF vs MMDF3N02HD
IRF7101TRPBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier IRF7313TRPBF vs IRF7101TRPBF
IRF7306TRPBF Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7313TRPBF vs IRF7306TRPBF
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7313TRPBF vs IRF7416TRPBF
IRF7404PBF-1 Power Field-Effect Transistor, International Rectifier IRF7313TRPBF vs IRF7404PBF-1
IRF7406PBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7313TRPBF vs IRF7406PBF
MMDF2N02E Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products IRF7313TRPBF vs MMDF2N02E
IRF7416QPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7313TRPBF vs IRF7416QPBF
IRF7406TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7313TRPBF vs IRF7406TRPBF

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